GBU10005 thru gbu1010 glass passivated bridge rectifier reverse voltage - 50 to 1000 volts forward current - 10.0 ampere f e a tures mechanical d a t a maxi mum r a tin g s and e l ect r i cal charact eri s tic s ratings at 25 c ambient temperature unless otherwise specified. s ingle phas e half-wav e 60hz,re s i sti v e o r inducti v e load,fo r c apac i t i v e load c u rrent der a t e b y 20%. glass passivated chip junction ideal for printed circuit board low reverse leakage current low forward voltage drop case:molded plastic, gbu t erminals : terminals: leads solderable per mil-std-202 method 208 guaranteed epoxy: ul 94v-0 rate flame retardant mounting position: any reliable low cost construction utilizing molded plastic technique high surge current capabiliy parameter s y mbols gbu 10005 gbu 1001 gbu 1002 gbu 1004 gbu 1006 gbu 1008 gbu 1010 unit s ma xi mu m recu rrent peak reve rse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 7 0 140 280 420 560 700 v maximum dc blocking voltage v d c 50 100 200 400 600 800 1000 v maximum average f o rw ard rectified current w i th heatsink at t c = 100 o c i ( av) peak f o rw ard surge current, 8.3 ms single half-sine - w ave superimposed on rated load (jedec method) i fsm 250 a maximum f o r w ard voltage a t 5.0 a dc and 25 o c v f 1 .0 v max i mum reverse current at t a = 2 5 o c a t rated dc blocking voltage t a = 125 o c i r 5.0 500 a t y pical junction capacitance 1 ) c j 70 p f t y pical t hermal resistance 2 ) r jc 2.2 o c/w operating and storage t e mperature range t j , t s -55 to + 150 o c 1) measured at 1 mhz and applied reverse voltage of 4 vdc. 2) thermal resistance from junction to case with device mounted on 300 mm x 300 mm x 1.6 mm cu plate heatsink. 10.0 a g b u
GBU10005 thru gbu1010 ra tings and characteristic cur ves 0.1 1.0 10 100 0.2 0 0.6 1.0 1.8 ) a ( t n e r r u c d r a w r o f s u o e n a t n a t s n i , i f v , ins t ant aneou s fo r w ar d vo lt age (v) fi g . 2 t y pica l forwar d characteristics , per element f t = 25 c j 1.4 0 100 200 2 5 0 1 10 100 ) a ( t n e r r u c e g r u s d r a w r o f k a e p , i m s f numbe r o f cycles a t 60hz fi g . 3 maximu m non-repetitive sur g e current single half-sin e w ave (jedec method) t = 25 c j 150 50 0 2 4 6 8 10 0 50 100 150 ) a ( t n e r r u c d e i f i t c e r d r a w r o f g v a , i ) v a ( t , cas e temper a ture ( c) fi g . 1 forwar d current deratin g curve c resistive or inductiv e load 10 100 1000 0.1 1.0 10 100 t , c o ) f p ( e c n a t i c a p a c l a t t v , reverse vo l t ag e (v) fig. 4 t ypica l t ot a l ca p aci t ance , per element r t = 25 c j f= 1.0mhz
|
